HSS1N20 Specs and Replacement
Type Designator: HSS1N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 88 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: SOT23L
HSS1N20 substitution
HSS1N20 datasheet
hss1n20.pdf
HSS1N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSS1N20 is the high cell density trenched VDS 200 V N-ch MOSFETs, which provides excellent RDS(ON),Max 1.9 RDSON and efficiency for most of the small power switching and load switch applications. ID 1 A The HSS1N20 meets the RoHS and Green Product requirement with full function reliability appr... See More ⇒
Detailed specifications: HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , RFP50N06 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B , HSS2305A , HSS2306A .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
