All MOSFET. HSS1N20 Datasheet

 

HSS1N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSS1N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: SOT23L

 HSS1N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSS1N20 Datasheet (PDF)

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 hss1n20.pdf

HSS1N20 HSS1N20

HSS1N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSS1N20 is the high cell density trenched VDS 200 V N-ch MOSFETs, which provides excellent RDS(ON),Max 1.9 RDSON and efficiency for most of the small power switching and load switch applications. ID 1 A The HSS1N20 meets the RoHS and Green Product requirement with full function reliability appr

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTP2603G6

 

 
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