HSS1N20 PDF and Equivalents Search

 

HSS1N20 Specs and Replacement

Type Designator: HSS1N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: SOT23L

HSS1N20 substitution

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HSS1N20 datasheet

 ..1. Size:740K  huashuo
 hss1n20.pdf pdf_icon

HSS1N20

HSS1N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSS1N20 is the high cell density trenched VDS 200 V N-ch MOSFETs, which provides excellent RDS(ON),Max 1.9 RDSON and efficiency for most of the small power switching and load switch applications. ID 1 A The HSS1N20 meets the RoHS and Green Product requirement with full function reliability appr... See More ⇒

Detailed specifications: HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , RFP50N06 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B , HSS2305A , HSS2306A .

Keywords - HSS1N20 MOSFET specs

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