All MOSFET. HSS1N20 Datasheet


HSS1N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSS1N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.71 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 88 pF

Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm

Package: SOT23L

HSS1N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSS1N20 Datasheet (PDF)

0.1. hss1n20.pdf Size:740K _huashuo


HSS1N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSS1N20 is the high cell density trenched VDS 200 V N-ch MOSFETs, which provides excellent RDS(ON),Max 1.9 RDSON and efficiency for most of the small power switching and load switch applications. ID 1 A The HSS1N20 meets the RoHS and Green Product requirement with full function reliability appr

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