All MOSFET. HSS1N20 Datasheet

 

HSS1N20 Datasheet and Replacement


   Type Designator: HSS1N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: SOT23L
 

 HSS1N20 substitution

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HSS1N20 Datasheet (PDF)

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HSS1N20

HSS1N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary The HSS1N20 is the high cell density trenched VDS 200 V N-ch MOSFETs, which provides excellent RDS(ON),Max 1.9 RDSON and efficiency for most of the small power switching and load switch applications. ID 1 A The HSS1N20 meets the RoHS and Green Product requirement with full function reliability appr

Datasheet: HSP6040 , HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , IRF2807 , HSS2012 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B , HSS2305A , HSS2306A .

Keywords - HSS1N20 MOSFET datasheet

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