HSS2012 Specs and Replacement
Type Designator: HSS2012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOT23
HSS2012 substitution
HSS2012 datasheet
hss2012.pdf
HSS2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2012 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 10 m and efficiency for most of the small power switching and load switch applications. ID 6.8 A The HSS2012 meet the RoHS and Green Product requirement with full function reliability approve... See More ⇒
Detailed specifications: HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , HSS1N20 , SI2302 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B , HSS2305A , HSS2306A , HSS2307 .
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