All MOSFET. HSS2012 Datasheet


HSS2012 MOSFET. Datasheet pdf. Equivalent

Type Designator: HSS2012

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 6.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: SOT23

HSS2012 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HSS2012 Datasheet (PDF)

0.1. hss2012.pdf Size:497K _huashuo


HSS2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2012 is the high cell density trenched N-VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 10 m and efficiency for most of the small power switching and load switch applications. ID 6.8 A The HSS2012 meet the RoHS and Green Product requirement with full function reliability approve

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