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HSS2012 Specs and Replacement

Type Designator: HSS2012

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: SOT23

HSS2012 substitution

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HSS2012 datasheet

 ..1. Size:497K  huashuo
 hss2012.pdf pdf_icon

HSS2012

HSS2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2012 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 10 m and efficiency for most of the small power switching and load switch applications. ID 6.8 A The HSS2012 meet the RoHS and Green Product requirement with full function reliability approve... See More ⇒

Detailed specifications: HSP6048 , HSP6115 , HSP8004 , HSP80P10 , HSP8N50 , HSS0008 , HSS0127 , HSS1N20 , SI2302 , HSS2300A , HSS2301B , HSS2301C , HSS2302A , HSS2302B , HSS2305A , HSS2306A , HSS2307 .

History: STD17N06-1

Keywords - HSS2012 MOSFET specs

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