HSS2607 Specs and Replacement

Type Designator: HSS2607

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: SOT23

HSS2607 substitution

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HSS2607 datasheet

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HSS2607

HSS2607 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2607 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 25 m and efficiency for most of the small power switching and load switch applications ID -5 A The HSS2607 meet the RoHS and Green Product requirement with full function reliability approved... See More ⇒

Detailed specifications: HSS2306A, HSS2307, HSS2307A, HSS2308A, HSS2310A, HSS2312A, HSS2319, HSS2333, IRF1405, HSS2N7002K, HSS2P10, HSS3400A, HSS3401A, HSS3402A, HSS3404A, HSS3407A, HSS3409A

Keywords - HSS2607 MOSFET specs

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