All MOSFET. HSS2607 Datasheet

 

HSS2607 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSS2607
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.3 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: SOT23

 HSS2607 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSS2607 Datasheet (PDF)

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 hss2607.pdf

HSS2607 HSS2607

HSS2607 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2607 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 25 m and efficiency for most of the small power switching and load switch applications ID -5 A The HSS2607 meet the RoHS and Green Product requirement with full function reliability approved

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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