HSS2607 Datasheet and Replacement
Type Designator: HSS2607
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: SOT23
HSS2607 substitution
HSS2607 Datasheet (PDF)
hss2607.pdf

HSS2607 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSS2607 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 25 m and efficiency for most of the small power switching and load switch applications ID -5 A The HSS2607 meet the RoHS and Green Product requirement with full function reliability approved
Datasheet: HSS2306A , HSS2307 , HSS2307A , HSS2308A , HSS2310A , HSS2312A , HSS2319 , HSS2333 , NCEP15T14 , HSS2N7002K , HSS2P10 , HSS3400A , HSS3401A , HSS3402A , HSS3404A , HSS3407A , HSS3409A .
History: AP65SL045AFWL | P2610BT | DMN3035LWN | SIB417EDK | NTMFS4H01NF | IPB34CN10N | FQD2N50TF
Keywords - HSS2607 MOSFET datasheet
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History: AP65SL045AFWL | P2610BT | DMN3035LWN | SIB417EDK | NTMFS4H01NF | IPB34CN10N | FQD2N50TF



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