HSS2P10 Specs and Replacement

Type Designator: HSS2P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: SOT23

HSS2P10 substitution

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HSS2P10 datasheet

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HSS2P10

HSS2P10 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSS2P10 is the high cell density trenched P- VDS -100 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 255 m and efficiency for most of the small power switching and load switch applications. ID -2 A The HSS2P10 meets the RoHS and Green Product requirement with full function reliability a... See More ⇒

Detailed specifications: HSS2307A, HSS2308A, HSS2310A, HSS2312A, HSS2319, HSS2333, HSS2607, HSS2N7002K, IRFZ48N, HSS3400A, HSS3401A, HSS3402A, HSS3404A, HSS3407A, HSS3409A, HSS3414A, HSS3415E

Keywords - HSS2P10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.