All MOSFET. HSS2P10 Datasheet

 

HSS2P10 Datasheet and Replacement


   Type Designator: HSS2P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: SOT23
 

 HSS2P10 substitution

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HSS2P10 Datasheet (PDF)

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HSS2P10

HSS2P10 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSS2P10 is the high cell density trenched P-VDS -100 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 255 m and efficiency for most of the small power switching and load switch applications. ID -2 A The HSS2P10 meets the RoHS and Green Product requirement with full function reliability a

Datasheet: HSS2307A , HSS2308A , HSS2310A , HSS2312A , HSS2319 , HSS2333 , HSS2607 , HSS2N7002K , RU7088R , HSS3400A , HSS3401A , HSS3402A , HSS3404A , HSS3407A , HSS3409A , HSS3414A , HSS3415E .

History: HAT1126RJ | AFN04N60T220FT | PMN55ENEA | TSM1N60LCH | SIHF9520 | AP55T10GS-HF | AON6508

Keywords - HSS2P10 MOSFET datasheet

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