All MOSFET. HSS2P10 Datasheet

 

HSS2P10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSS2P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: SOT23

 HSS2P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSS2P10 Datasheet (PDF)

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 hss2p10.pdf

HSS2P10 HSS2P10

HSS2P10 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSS2P10 is the high cell density trenched P-VDS -100 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 255 m and efficiency for most of the small power switching and load switch applications. ID -2 A The HSS2P10 meets the RoHS and Green Product requirement with full function reliability a

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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