All MOSFET. HSS3N10 Datasheet

 

HSS3N10 Datasheet and Replacement


   Type Designator: HSS3N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23
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HSS3N10 Datasheet (PDF)

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HSS3N10

HSS3N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSS3N10 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 110 m gate charge for most of the synchronous buck converter applications. ID 3 A The HSS3N10 meet the RoHS and Green Product requirement with full function reliability approved. Gre

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History: SFB021N80C3 | HLML6401 | TK40P04M1 | IPW60R060P7 | 2SK4143-S17-AY | STD15NF10T4 | AP85T03GH-HF

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