HSS3N10 Specs and Replacement

Type Designator: HSS3N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 29 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SOT23

HSS3N10 substitution

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HSS3N10 datasheet

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HSS3N10

HSS3N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSS3N10 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 110 m gate charge for most of the synchronous buck converter applications. ID 3 A The HSS3N10 meet the RoHS and Green Product requirement with full function reliability approved. Gre... See More ⇒

Detailed specifications: HSS3401A, HSS3402A, HSS3404A, HSS3407A, HSS3409A, HSS3414A, HSS3415E, HSS3416E, MMIS60R580P, HSS4002, HSS6014, HSS6107, HSSC3134, HSSC3139, HSSK6303, HSSK8811, HSSN3134

Keywords - HSS3N10 MOSFET specs

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