All MOSFET. HSS3N10 Datasheet

 

HSS3N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSS3N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.3 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23

 HSS3N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSS3N10 Datasheet (PDF)

 ..1. Size:439K  huashuo
 hss3n10.pdf

HSS3N10 HSS3N10

HSS3N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSS3N10 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 110 m gate charge for most of the synchronous buck converter applications. ID 3 A The HSS3N10 meet the RoHS and Green Product requirement with full function reliability approved. Gre

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFX21N100Q

 

 
Back to Top