All MOSFET. HSS3N10 Datasheet

 

HSS3N10 Datasheet and Replacement


   Type Designator: HSS3N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 29 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT23
 

 HSS3N10 substitution

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HSS3N10 Datasheet (PDF)

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HSS3N10

HSS3N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSS3N10 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 110 m gate charge for most of the synchronous buck converter applications. ID 3 A The HSS3N10 meet the RoHS and Green Product requirement with full function reliability approved. Gre

Datasheet: HSS3401A , HSS3402A , HSS3404A , HSS3407A , HSS3409A , HSS3414A , HSS3415E , HSS3416E , 2N7002 , HSS4002 , HSS6014 , HSS6107 , HSSC3134 , HSSC3139 , HSSK6303 , HSSK8811 , HSSN3134 .

History: VBZA4409 | NCEP050N85M | HSS6107 | HSS6014 | SHD225715 | CJP01N65B | AOB450A70L

Keywords - HSS3N10 MOSFET datasheet

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