All MOSFET. HSS6014 Datasheet

 

HSS6014 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSS6014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOT23

 HSS6014 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSS6014 Datasheet (PDF)

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 hss6014.pdf

HSS6014 HSS6014

HSS6014 N-Ch 60V Fast Switching MOSFETs Description Product Summary VDS 60 V The HSS6014 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 40 m gate charge for most of the synchronous buck converter applications. ID 6 A The HSS6014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AOD452A

 

 
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