HSS6107 Datasheet and Replacement
Type Designator: HSS6107
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 59 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SOT23
HSS6107 substitution
HSS6107 Datasheet (PDF)
hss6107.pdf

HSS6107 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSS6107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),max 180 m and efficiency for most of the small power switching and load switch applications. ID -1.7 A The HSS6107 meet the RoHS and Green Product requirement with full function reliability appr
Datasheet: HSS3407A , HSS3409A , HSS3414A , HSS3415E , HSS3416E , HSS3N10 , HSS4002 , HSS6014 , IRFB7545 , HSSC3134 , HSSC3139 , HSSK6303 , HSSK8811 , HSSN3134 , HSSN3139 , HSST3134 , HSST3139 .
History: PSMN9R5-30YLC | AM2391P | HSS4002 | GSM8987 | IRF630M
Keywords - HSS6107 MOSFET datasheet
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History: PSMN9R5-30YLC | AM2391P | HSS4002 | GSM8987 | IRF630M



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