HSS6107 Specs and Replacement

Type Designator: HSS6107

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT23

HSS6107 substitution

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HSS6107 datasheet

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HSS6107

HSS6107 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSS6107 is the high cell density trenched P- ch MOSFETs, which provides excellent RDSON RDS(ON),max 180 m and efficiency for most of the small power switching and load switch applications. ID -1.7 A The HSS6107 meet the RoHS and Green Product requirement with full function reliability appr... See More ⇒

Detailed specifications: HSS3407A, HSS3409A, HSS3414A, HSS3415E, HSS3416E, HSS3N10, HSS4002, HSS6014, 60N06, HSSC3134, HSSC3139, HSSK6303, HSSK8811, HSSN3134, HSSN3139, HSST3134, HSST3139

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