HSSC3139 Datasheet and Replacement
Type Designator: HSSC3139
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SOT723
HSSC3139 substitution
HSSC3139 Datasheet (PDF)
hssc3139.pdf

HSSC3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSC3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 400 m converter applications. ID -0.65 A The HSSC3139 meet the RoHS and Green Product requirement with full function reliability approved.
hssc3134.pdf

HSSC3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSC3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),max 370 m power switching and load switch applications. ID 0.77 A The HSSC3134 meets the RoHS and Green Product requirement with full function reliability
Datasheet: HSS3414A , HSS3415E , HSS3416E , HSS3N10 , HSS4002 , HSS6014 , HSS6107 , HSSC3134 , IRFP064N , HSSK6303 , HSSK8811 , HSSN3134 , HSSN3139 , HSST3134 , HSST3139 , HSU0004 , HSU0018A .
History: SE4942B | 2SK2527-01MR | 2SK1520 | AFN8412 | TSF10N65M | IXTH1N200P3HV | CED4060AL
Keywords - HSSC3139 MOSFET datasheet
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History: SE4942B | 2SK2527-01MR | 2SK1520 | AFN8412 | TSF10N65M | IXTH1N200P3HV | CED4060AL



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