All MOSFET. HSSC3139 Datasheet

 

HSSC3139 Datasheet and Replacement


   Type Designator: HSSC3139
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT723
 

 HSSC3139 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HSSC3139 Datasheet (PDF)

 ..1. Size:746K  huashuo
hssc3139.pdf pdf_icon

HSSC3139

HSSC3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSC3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 400 m converter applications. ID -0.65 A The HSSC3139 meet the RoHS and Green Product requirement with full function reliability approved.

 7.1. Size:722K  huashuo
hssc3134.pdf pdf_icon

HSSC3139

HSSC3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSC3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),max 370 m power switching and load switch applications. ID 0.77 A The HSSC3134 meets the RoHS and Green Product requirement with full function reliability

Datasheet: HSS3414A , HSS3415E , HSS3416E , HSS3N10 , HSS4002 , HSS6014 , HSS6107 , HSSC3134 , IRFP064N , HSSK6303 , HSSK8811 , HSSN3134 , HSSN3139 , HSST3134 , HSST3139 , HSU0004 , HSU0018A .

History: QS6J11 | C3M0065100K | SQM90142E | CS65N20-30 | IXFV110N10P | DMG8880LSS | IPB120N08S4-03

Keywords - HSSC3139 MOSFET datasheet

 HSSC3139 cross reference
 HSSC3139 equivalent finder
 HSSC3139 lookup
 HSSC3139 substitution
 HSSC3139 replacement

 

 
Back to Top

 


 
.