HSSC3139 Specs and Replacement

Type Designator: HSSC3139

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT723

HSSC3139 substitution

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HSSC3139 datasheet

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HSSC3139

HSSC3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSC3139 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 400 m converter applications. ID -0.65 A The HSSC3139 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

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HSSC3139

HSSC3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSC3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),max 370 m power switching and load switch applications. ID 0.77 A The HSSC3134 meets the RoHS and Green Product requirement with full function reliability ... See More ⇒

Detailed specifications: HSS3414A, HSS3415E, HSS3416E, HSS3N10, HSS4002, HSS6014, HSS6107, HSSC3134, AO4468, HSSK6303, HSSK8811, HSSN3134, HSSN3139, HSST3134, HSST3139, HSU0004, HSU0018A

Keywords - HSSC3139 MOSFET specs

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