HSSK6303 Specs and Replacement
Type Designator: HSSK6303
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: SOT363
HSSK6303 substitution
- MOSFET ⓘ Cross-Reference Search
HSSK6303 datasheet
hssk6303.pdf
HSSK6303 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSSK6303 from WILLAS provide the best combination of fast switching,low on-resistance RDS(ON),typ 340 m and cost-effectiveness. The HSSK6303 meet the RoHS and Green Product ID 0.5 A requirement with full function reliability approved. Green Device Available Super Low Gate C... See More ⇒
Detailed specifications: HSS3415E, HSS3416E, HSS3N10, HSS4002, HSS6014, HSS6107, HSSC3134, HSSC3139, IRF730, HSSK8811, HSSN3134, HSSN3139, HSST3134, HSST3139, HSU0004, HSU0018A, HSU0026
Keywords - HSSK6303 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: ZXMN2088DE6
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