All MOSFET. HSSK6303 Datasheet

 

HSSK6303 Datasheet and Replacement


   Type Designator: HSSK6303
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT363
 

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HSSK6303 Datasheet (PDF)

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HSSK6303

HSSK6303 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSSK6303 from WILLAS provide the best combination of fast switching,low on-resistance RDS(ON),typ 340 m and cost-effectiveness. The HSSK6303 meet the RoHS and Green Product ID 0.5 A requirement with full function reliability approved. Green Device Available Super Low Gate C

Datasheet: HSS3415E , HSS3416E , HSS3N10 , HSS4002 , HSS6014 , HSS6107 , HSSC3134 , HSSC3139 , IRFP064N , HSSK8811 , HSSN3134 , HSSN3139 , HSST3134 , HSST3139 , HSU0004 , HSU0018A , HSU0026 .

History: SQJ884EP | SFF9130J

Keywords - HSSK6303 MOSFET datasheet

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