All MOSFET. HSSK8811 Datasheet

 

HSSK8811 Datasheet and Replacement


   Type Designator: HSSK8811
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT363
 

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HSSK8811 Datasheet (PDF)

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HSSK8811

HSSK8811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSK8811 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 115 m and load switch applications. ID -1.5 A The HSSK8811 meet the RoHS and Green Product requirement with full function reliability

Datasheet: HSS3416E , HSS3N10 , HSS4002 , HSS6014 , HSS6107 , HSSC3134 , HSSC3139 , HSSK6303 , IRFZ44N , HSSN3134 , HSSN3139 , HSST3134 , HSST3139 , HSU0004 , HSU0018A , HSU0026 , HSU0048 .

History: SJMN1K6R70D

Keywords - HSSK8811 MOSFET datasheet

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