HSSK8811 Specs and Replacement

Type Designator: HSSK8811

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT363

HSSK8811 substitution

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HSSK8811 datasheet

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HSSK8811

HSSK8811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSK8811 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 115 m and load switch applications. ID -1.5 A The HSSK8811 meet the RoHS and Green Product requirement with full function reliability ... See More ⇒

Detailed specifications: HSS3416E, HSS3N10, HSS4002, HSS6014, HSS6107, HSSC3134, HSSC3139, HSSK6303, IRFZ44N, HSSN3134, HSSN3139, HSST3134, HSST3139, HSU0004, HSU0018A, HSU0026, HSU0048

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