HSSK8811 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSSK8811
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4.1 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT363
HSSK8811 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSSK8811 Datasheet (PDF)
hssk8811.pdf
HSSK8811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSK8811 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 115 m and load switch applications. ID -1.5 A The HSSK8811 meet the RoHS and Green Product requirement with full function reliability
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F