HSSN3134 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSSN3134
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.6 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 25 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT323
HSSN3134 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSSN3134 Datasheet (PDF)
hssn3134.pdf
HSSN3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSN3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),Max 200 m power switching and load switch applications. ID 1.0 A The HSSN3134 meets the RoHS and Green Product requirement with full function reliability
hssn3139.pdf
HSSN3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSN3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),Max 630 m converter applications. ID -0.5 A The HSSN3139 meet the RoHS and Green Product requirement with full function reliability approved.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MCH3409-TL
