All MOSFET. HSSN3134 Datasheet

 

HSSN3134 Datasheet and Replacement


   Type Designator: HSSN3134
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SOT323
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HSSN3134 Datasheet (PDF)

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HSSN3134

HSSN3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSN3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),Max 200 m power switching and load switch applications. ID 1.0 A The HSSN3134 meets the RoHS and Green Product requirement with full function reliability

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HSSN3134

HSSN3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSN3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),Max 630 m converter applications. ID -0.5 A The HSSN3139 meet the RoHS and Green Product requirement with full function reliability approved.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: RF1S9540SM | TSM4424CS | LKK47-06C5 | FMR23N50E | SVS70R900SE3TR | BRCS200P03DP | IRFB3004GPBF

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