HSSN3139 Specs and Replacement

Type Designator: HSSN3139

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.63 Ohm

Package: SOT323

HSSN3139 substitution

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HSSN3139 datasheet

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HSSN3139

HSSN3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSN3139 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),Max 630 m converter applications. ID -0.5 A The HSSN3139 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

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HSSN3139

HSSN3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSN3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),Max 200 m power switching and load switch applications. ID 1.0 A The HSSN3134 meets the RoHS and Green Product requirement with full function reliability ... See More ⇒

Detailed specifications: HSS4002, HSS6014, HSS6107, HSSC3134, HSSC3139, HSSK6303, HSSK8811, HSSN3134, IRF740, HSST3134, HSST3139, HSU0004, HSU0018A, HSU0026, HSU0048, HSU0115, HSU0139

Keywords - HSSN3139 MOSFET specs

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