HSSN3139 Datasheet and Replacement
Type Designator: HSSN3139
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.63 Ohm
Package: SOT323
HSSN3139 substitution
HSSN3139 Datasheet (PDF)
hssn3139.pdf

HSSN3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSN3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),Max 630 m converter applications. ID -0.5 A The HSSN3139 meet the RoHS and Green Product requirement with full function reliability approved.
hssn3134.pdf

HSSN3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSN3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),Max 200 m power switching and load switch applications. ID 1.0 A The HSSN3134 meets the RoHS and Green Product requirement with full function reliability
Datasheet: HSS4002 , HSS6014 , HSS6107 , HSSC3134 , HSSC3139 , HSSK6303 , HSSK8811 , HSSN3134 , IRF740 , HSST3134 , HSST3139 , HSU0004 , HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 .
History: FQN1N50CTA | BSS84KW
Keywords - HSSN3139 MOSFET datasheet
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History: FQN1N50CTA | BSS84KW



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