All MOSFET. HSSN3139 Datasheet

 

HSSN3139 Datasheet and Replacement


   Type Designator: HSSN3139
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.63 Ohm
   Package: SOT323
 

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HSSN3139 Datasheet (PDF)

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HSSN3139

HSSN3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSSN3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),Max 630 m converter applications. ID -0.5 A The HSSN3139 meet the RoHS and Green Product requirement with full function reliability approved.

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HSSN3139

HSSN3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSSN3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),Max 200 m power switching and load switch applications. ID 1.0 A The HSSN3134 meets the RoHS and Green Product requirement with full function reliability

Datasheet: HSS4002 , HSS6014 , HSS6107 , HSSC3134 , HSSC3139 , HSSK6303 , HSSK8811 , HSSN3134 , IRF740 , HSST3134 , HSST3139 , HSU0004 , HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 .

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