HSST3139 Specs and Replacement
Type Designator: HSST3139
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
Package: SOT523
HSST3139 substitution
- MOSFET ⓘ Cross-Reference Search
HSST3139 datasheet
hsst3139.pdf
HSST3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSST3139 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 230 m converter applications. ID -1.0 A The HSST3139 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒
hsst3134.pdf
HSST3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSST3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 280 m power switching and load switch applications. ID 0.9 A The HSST3134 meets the RoHS and Green Product requirement with full function reliability ... See More ⇒
Detailed specifications: HSS6107, HSSC3134, HSSC3139, HSSK6303, HSSK8811, HSSN3134, HSSN3139, HSST3134, 20N60, HSU0004, HSU0018A, HSU0026, HSU0048, HSU0115, HSU0139, HSU100P03, HSU1241
Keywords - HSST3139 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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