All MOSFET. HSST3139 Datasheet

 

HSST3139 Datasheet and Replacement


   Type Designator: HSST3139
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOT523
 

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HSST3139 Datasheet (PDF)

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HSST3139

HSST3139 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSST3139 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 230 m converter applications. ID -1.0 A The HSST3139 meet the RoHS and Green Product requirement with full function reliability approved.

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HSST3139

HSST3134 N-Ch 20V Fast Switching MOSFETs Product Summary Description The HSST3134 is the high cell density trenched VDS 20 V N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small RDS(ON),typ 280 m power switching and load switch applications. ID 0.9 A The HSST3134 meets the RoHS and Green Product requirement with full function reliability

Datasheet: HSS6107 , HSSC3134 , HSSC3139 , HSSK6303 , HSSK8811 , HSSN3134 , HSSN3139 , HSST3134 , 20N60 , HSU0004 , HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 , HSU100P03 , HSU1241 .

History: CSD19532Q5B | BUK9277-55A | DH100P30AF | PK6A8BA | PM5Q2EA | PKCD0BB | IRFS9641

Keywords - HSST3139 MOSFET datasheet

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