HSU0139 Specs and Replacement

Type Designator: HSU0139

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 102 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32.2 nS

Cossⓘ - Output Capacitance: 223 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO252

HSU0139 substitution

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HSU0139 datasheet

 ..1. Size:847K  huashuo
 hsu0139.pdf pdf_icon

HSU0139

HSU0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSU0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ... See More ⇒

 9.1. Size:760K  huashuo
 hsu0115.pdf pdf_icon

HSU0139

HSU0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSU0115 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 78 m charge for use in a wide variety of other applications. ID -18 A The HSU0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ... See More ⇒

Detailed specifications: HSSN3139, HSST3134, HSST3139, HSU0004, HSU0018A, HSU0026, HSU0048, HSU0115, IRF640, HSU100P03, HSU1241, HSU12N10, HSU150N03, HSU16N25, HSU18N20, HSU20N15A, HSU3006

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