All MOSFET. HSU0139 Datasheet

 

HSU0139 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU0139
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 102 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 32.2 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO252

 HSU0139 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU0139 Datasheet (PDF)

 ..1. Size:847K  huashuo
 hsu0139.pdf

HSU0139 HSU0139

HSU0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSU0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.1. Size:760K  huashuo
 hsu0115.pdf

HSU0139 HSU0139

HSU0115 P-Ch 100V Fast Switching MOSFETs Product Summary Description The HSU0115 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 78 m charge for use in a wide variety of other applications. ID -18 A The HSU0115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top