HSU100P03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSU100P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 989 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO252
HSU100P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSU100P03 Datasheet (PDF)
..1. Size:1549K huashuo
hsu100p03.pdf
hsu100p03.pdf
HSU100P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 4 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSU100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
