All MOSFET. HSU100P03 Datasheet

 

HSU100P03 Datasheet and Replacement


   Type Designator: HSU100P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 989 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO252
 

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HSU100P03 Datasheet (PDF)

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HSU100P03

HSU100P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 4 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSU100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSST3134 , HSST3139 , HSU0004 , HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 , IRF1404 , HSU1241 , HSU12N10 , HSU150N03 , HSU16N25 , HSU18N20 , HSU20N15A , HSU3006 , HSU3014 .

History: HSU150N03

Keywords - HSU100P03 MOSFET datasheet

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