HSU100P03 Specs and Replacement

Type Designator: HSU100P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 105 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 989 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO252

HSU100P03 substitution

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HSU100P03 datasheet

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HSU100P03

HSU100P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 4 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSU100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function... See More ⇒

Detailed specifications: HSST3134, HSST3139, HSU0004, HSU0018A, HSU0026, HSU0048, HSU0115, HSU0139, IRF1404, HSU1241, HSU12N10, HSU150N03, HSU16N25, HSU18N20, HSU20N15A, HSU3006, HSU3014

Keywords - HSU100P03 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.