All MOSFET. HSU100P03 Datasheet

 

HSU100P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU100P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 989 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO252

 HSU100P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU100P03 Datasheet (PDF)

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 hsu100p03.pdf

HSU100P03 HSU100P03

HSU100P03 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 4 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSU100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

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