All MOSFET. HSU150N03 Datasheet

 

HSU150N03 Datasheet and Replacement


   Type Designator: HSU150N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO252
 

 HSU150N03 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HSU150N03 Datasheet (PDF)

 ..1. Size:660K  huashuo
 hsu150n03.pdf pdf_icon

HSU150N03

HSU150N03 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU150N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 2.4 m buck converter applications. ID 150 A The HSU150N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

Datasheet: HSU0018A , HSU0026 , HSU0048 , HSU0115 , HSU0139 , HSU100P03 , HSU1241 , HSU12N10 , IRF630 , HSU16N25 , HSU18N20 , HSU20N15A , HSU3006 , HSU3014 , HSU3016 , HSU3018B , HSU3031 .

History: APT3580BN | RSR030N06

Keywords - HSU150N03 MOSFET datasheet

 HSU150N03 cross reference
 HSU150N03 equivalent finder
 HSU150N03 lookup
 HSU150N03 substitution
 HSU150N03 replacement

 

 
Back to Top

 


 
.