HSU150N03 Specs and Replacement

Type Designator: HSU150N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO252

HSU150N03 substitution

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HSU150N03 datasheet

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HSU150N03

HSU150N03 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU150N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 2.4 m buck converter applications. ID 150 A The HSU150N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function ... See More ⇒

Detailed specifications: HSU0018A, HSU0026, HSU0048, HSU0115, HSU0139, HSU100P03, HSU1241, HSU12N10, IRF640N, HSU16N25, HSU18N20, HSU20N15A, HSU3006, HSU3014, HSU3016, HSU3018B, HSU3031

Keywords - HSU150N03 MOSFET specs

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