HSU150N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSU150N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: TO252
HSU150N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSU150N03 Datasheet (PDF)
..1. Size:660K huashuo
hsu150n03.pdf
hsu150n03.pdf
HSU150N03 N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU150N03 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),typ 2.4 m buck converter applications. ID 150 A The HSU150N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
