All MOSFET. HSU16N25 Datasheet

 

HSU16N25 Datasheet and Replacement


   Type Designator: HSU16N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 149 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO252
 

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HSU16N25 Datasheet (PDF)

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HSU16N25

HSU16N25 N-Ch 250V Fast Switching MOSFETs Description Product Summary VDS 250 V The HSU16N25 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 250 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 16 A applications. The HSU16N25 meet the RoHS and Green Product requirement, 100% EAS g

Datasheet: HSU0026 , HSU0048 , HSU0115 , HSU0139 , HSU100P03 , HSU1241 , HSU12N10 , HSU150N03 , 10N60 , HSU18N20 , HSU20N15A , HSU3006 , HSU3014 , HSU3016 , HSU3018B , HSU3031 , HSU3103 .

History: PE532DY | OSG60R1K8PF

Keywords - HSU16N25 MOSFET datasheet

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