HSU16N25 Specs and Replacement

Type Designator: HSU16N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 149 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO252

HSU16N25 substitution

- MOSFET ⓘ Cross-Reference Search

 

HSU16N25 datasheet

 ..1. Size:987K  huashuo
 hsu16n25.pdf pdf_icon

HSU16N25

HSU16N25 N-Ch 250V Fast Switching MOSFETs Description Product Summary VDS 250 V The HSU16N25 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 250 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 16 A applications. The HSU16N25 meet the RoHS and Green Product requirement, 100% EAS g... See More ⇒

Detailed specifications: HSU0026, HSU0048, HSU0115, HSU0139, HSU100P03, HSU1241, HSU12N10, HSU150N03, IRFP260N, HSU18N20, HSU20N15A, HSU3006, HSU3014, HSU3016, HSU3018B, HSU3031, HSU3103

Keywords - HSU16N25 MOSFET specs

 HSU16N25 cross reference

 HSU16N25 equivalent finder

 HSU16N25 pdf lookup

 HSU16N25 substitution

 HSU16N25 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.