HSU18N20 Specs and Replacement

Type Designator: HSU18N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.2 nS

Cossⓘ - Output Capacitance: 109 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO252

HSU18N20 substitution

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HSU18N20 datasheet

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HSU18N20

HSU18N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary VDS 200 V The HSU18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 170 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 18 A applications. The HSU18N20 meet the RoHS and Green Product requirement, 100% EAS gua... See More ⇒

Detailed specifications: HSU0048, HSU0115, HSU0139, HSU100P03, HSU1241, HSU12N10, HSU150N03, HSU16N25, AO3400, HSU20N15A, HSU3006, HSU3014, HSU3016, HSU3018B, HSU3031, HSU3103, HSU3903

Keywords - HSU18N20 MOSFET specs

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