All MOSFET. HSU18N20 Datasheet

 

HSU18N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU18N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO252

 HSU18N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU18N20 Datasheet (PDF)

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 hsu18n20.pdf

HSU18N20 HSU18N20

HSU18N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary VDS 200 V The HSU18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 170 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 18 A applications. The HSU18N20 meet the RoHS and Green Product requirement, 100% EAS gua

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