All MOSFET. HSU18N20 Datasheet

 

HSU18N20 Datasheet and Replacement


   Type Designator: HSU18N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO252
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HSU18N20 Datasheet (PDF)

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HSU18N20

HSU18N20 N-Ch 200V Fast Switching MOSFETs Description Product Summary VDS 200 V The HSU18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 170 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 18 A applications. The HSU18N20 meet the RoHS and Green Product requirement, 100% EAS gua

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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