SSW5N80A PDF and Equivalents Search

 

SSW5N80A Specs and Replacement

Type Designator: SSW5N80A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm

Package: TO263

SSW5N80A substitution

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SSW5N80A datasheet

 ..1. Size:215K  1
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SSW5N80A

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 ..2. Size:503K  samsung
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SSW5N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 1.824 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒

 9.1. Size:202K  1
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SSW5N80A

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Detailed specifications: SSW2N90A , SSW3N80A , SSW3N90A , SSW4N60A , SSW4N80A , SSW4N80AS , SSW4N90A , SSW4N90AS , STP80NF70 , SSW5N90A , SSW6N70A , SSW7N60A , STD10N10-1 , STD10N10L-1 , STD10N10LT4 , STD10N10T4 , STD12N05 .

Keywords - SSW5N80A MOSFET specs

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