All MOSFET. HSU6113 Datasheet

 

HSU6113 Datasheet and Replacement


   Type Designator: HSU6113
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.6 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

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HSU6113 Datasheet (PDF)

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HSU6113

HSU6113 P-Ch 60V Fast Switching MOSFETs Product Summary Description The HSU6113 is the high cell density trenched P- VDS -60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 90 m gate charge for most of the synchronous buck converter applications. ID -13 A The HSU6113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

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HSU6113

HSU6115 P-Ch 60V Fast Switching MOSFETs Description Product Summary VDS -60 V The HSU6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),max 25 m and gate charge for most of the synchronous buck converter applications. ID -35 A The HSU6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

Datasheet: HSU6006 , HSU6008 , HSU6014 , HSU6032 , HSU6040 , HSU60N02 , HSU60P02 , HSU60P03 , TK10A60D , HSU6115 , HSU6901 , HSU6903 , HSU70P06 , HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452

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