HSU6901 Datasheet and Replacement
Type Designator: HSU6901
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14.2 nS
Cossⓘ - Output Capacitance: 86 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252-4
HSU6901 substitution
HSU6901 Datasheet (PDF)
hsu6901.pdf

HSU6901 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSU6901 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 60V 32m 23A high cell density, which provide excellent RDSON and gate charge for most of the synchronous -60V 70m -18A buck converter applications . The HSU6901 meet the RoHS and Green Product requirem
hsu6903.pdf

HSU6903 N-Ch and P-Ch Fast Switching MOSFETs Description Product Summary The HSU6903 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 60V 40m 20A high cell density, which provide excellent RDSON -60V 100m -12A and gate charge for most of the synchronous buck converter applications. The HSU6903 meet the RoHS and Green Product requ
Datasheet: HSU6014 , HSU6032 , HSU6040 , HSU60N02 , HSU60P02 , HSU60P03 , HSU6113 , HSU6115 , 4N60 , HSU6903 , HSU70P06 , HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 .
History: GT060N10T | SM6362D1RL | FTK1090 | SWP046R08E8T | SIA453EDJ | NCE603583 | 2SK1981
Keywords - HSU6901 MOSFET datasheet
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History: GT060N10T | SM6362D1RL | FTK1090 | SWP046R08E8T | SIA453EDJ | NCE603583 | 2SK1981



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