All MOSFET. HSU70P06 Datasheet

 

HSU70P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU70P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 206 nS
   Cossⓘ - Output Capacitance: 494 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO252

 HSU70P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU70P06 Datasheet (PDF)

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 hsu70p06.pdf

HSU70P06 HSU70P06

HSU70P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary V -60 V DSThe HSU70P06 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON R 7.5 m DS(ON),typand gate charge for most of the synchronous buck converter applications. I -70 A DThe HSU70P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functio

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