All MOSFET. HSU70P06 Datasheet

 

HSU70P06 Datasheet and Replacement


   Type Designator: HSU70P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 206 nS
   Cossⓘ - Output Capacitance: 494 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO252
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HSU70P06 Datasheet (PDF)

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HSU70P06

HSU70P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary V -60 V DSThe HSU70P06 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON R 7.5 m DS(ON),typand gate charge for most of the synchronous buck converter applications. I -70 A DThe HSU70P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functio

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: GP2M008A060XXX | CS20N50ANH | DMNH10H028SCT | SE8209 | AOT22N50 | SI7342DP | IRLS4030

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