All MOSFET. HSU70P06 Datasheet

 

HSU70P06 Datasheet and Replacement


   Type Designator: HSU70P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 206 nS
   Cossⓘ - Output Capacitance: 494 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
   Package: TO252
 

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HSU70P06 Datasheet (PDF)

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HSU70P06

HSU70P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary V -60 V DSThe HSU70P06 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON R 7.5 m DS(ON),typand gate charge for most of the synchronous buck converter applications. I -70 A DThe HSU70P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functio

Datasheet: HSU6040 , HSU60N02 , HSU60P02 , HSU60P03 , HSU6113 , HSU6115 , HSU6901 , HSU6903 , IRF1010E , HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 .

History: SI7868ADP

Keywords - HSU70P06 MOSFET datasheet

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