HSU70P06 Specs and Replacement
Type Designator: HSU70P06
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 206 nS
Cossⓘ - Output Capacitance: 494 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0092 Ohm
Package: TO252
HSU70P06 substitution
- MOSFET ⓘ Cross-Reference Search
HSU70P06 datasheet
hsu70p06.pdf
HSU70P06 P-Ch 60V Fast Switching MOSFETs Description Product Summary V -60 V DS The HSU70P06 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON R 7.5 m DS(ON),typ and gate charge for most of the synchronous buck converter applications. I -70 A D The HSU70P06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full functio... See More ⇒
Detailed specifications: HSU6040, HSU60N02, HSU60P02, HSU60P03, HSU6113, HSU6115, HSU6901, HSU6903, IRF1010E, HSU80N03, HSU90N02, HSU90N03, HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800
Keywords - HSU70P06 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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