All MOSFET. HSU90N02 Datasheet

 

HSU90N02 Datasheet and Replacement


   Type Designator: HSU90N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 82 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252
 

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HSU90N02 Datasheet (PDF)

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HSU90N02

HSU90N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU90N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 2.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

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HSU90N02

HSU90N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU90N03 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi

Datasheet: HSU60P02 , HSU60P03 , HSU6113 , HSU6115 , HSU6901 , HSU6903 , HSU70P06 , HSU80N03 , IRLZ44N , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 , HSW6811 , HSW8205 .

History: PE532DY | OSG60R1K8PF

Keywords - HSU90N02 MOSFET datasheet

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