All MOSFET. HSU90N02 Datasheet

 

HSU90N02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSU90N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 82 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO252

 HSU90N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSU90N02 Datasheet (PDF)

 ..1. Size:1454K  huashuo
 hsu90n02.pdf

HSU90N02 HSU90N02

HSU90N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU90N02 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 2.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 7.1. Size:446K  huashuo
 hsu90n03.pdf

HSU90N02 HSU90N02

HSU90N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU90N03 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi

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History: SRT15N090HTC

 

 
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