SSW5N90A MOSFET. Datasheet pdf. Equivalent
Type Designator: SSW5N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 140 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Drain Current |Id|: 5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 54 nC
Drain-Source Capacitance (Cd): 1110 pF
Maximum Drain-Source On-State Resistance (Rds): 2.9 Ohm
Package: TO263
SSW5N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSW5N90A Datasheet (PDF)
5.1. ssw5n80a.pdf 
Size:503K _samsung
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) : 1.824 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic
Datasheet: SSW3N80A , SSW3N90A , SSW4N60A , SSW4N80A , SSW4N80AS , SSW4N90A , SSW4N90AS , SSW5N80A , IRFP4232 , SSW6N70A , SSW7N60A , STD10N10-1 , STD10N10L-1 , STD10N10LT4 , STD10N10T4 , STD12N05 , STD12N05-1 .
