All MOSFET. SSW5N90A Datasheet

 

SSW5N90A Datasheet and Replacement


   Type Designator: SSW5N90A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 54 nC
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: TO263
 

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SSW5N90A Datasheet (PDF)

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SSW5N90A

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SSW5N90A

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SSW5N90A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V2 Low RDS(ON) : 1.824 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - SSW5N90A MOSFET datasheet

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