All MOSFET. SSW5N90A Datasheet

 

SSW5N90A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSW5N90A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 54 nC

Drain-Source Capacitance (Cd): 1110 pF

Maximum Drain-Source On-State Resistance (Rds): 2.9 Ohm

Package: TO263

SSW5N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSW5N90A Datasheet (PDF)

5.1. ssw5n80a.pdf Size:503K _samsung

SSW5N90A SSW5N90A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) : 1.824 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

 
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