HSU90N03 Specs and Replacement
Type Designator: HSU90N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
HSU90N03 substitution
- MOSFET ⓘ Cross-Reference Search
HSU90N03 datasheet
hsu90n03.pdf
HSU90N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU90N03 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi... See More ⇒
hsu90n02.pdf
HSU90N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU90N02 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 2.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒
Detailed specifications: HSU60P03, HSU6113, HSU6115, HSU6901, HSU6903, HSU70P06, HSU80N03, HSU90N02, IRF530, HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810
Keywords - HSU90N03 MOSFET specs
HSU90N03 cross reference
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