HSU90N03 PDF and Equivalents Search

 

HSU90N03 Specs and Replacement

Type Designator: HSU90N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO252

HSU90N03 substitution

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HSU90N03 datasheet

 ..1. Size:446K  huashuo
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HSU90N03

HSU90N03 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU90N03 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliabi... See More ⇒

 7.1. Size:1454K  huashuo
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HSU90N03

HSU90N02 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSU90N02 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 2.7 m gate charge for most of the synchronous buck converter applications. ID 90 A The HSU90N02 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒

Detailed specifications: HSU60P03, HSU6113, HSU6115, HSU6901, HSU6903, HSU70P06, HSU80N03, HSU90N02, IRF530, HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810

Keywords - HSU90N03 MOSFET specs

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