HSW2N15 PDF and Equivalents Search

 

HSW2N15 Specs and Replacement

Type Designator: HSW2N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.8 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm

Package: SOT23-6L

HSW2N15 substitution

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HSW2N15 datasheet

 ..1. Size:561K  huashuo
 hsw2n15.pdf pdf_icon

HSW2N15

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DS The HSW2N15 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typ gate charge for most of the synchronous buck converter applications. I 1.4 A D The HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved. ... See More ⇒

Detailed specifications: HSU6113, HSU6115, HSU6901, HSU6903, HSU70P06, HSU80N03, HSU90N02, HSU90N03, CS150N03A8, HSW3415, HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810, MMN1000DB010B

Keywords - HSW2N15 MOSFET specs

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