All MOSFET. HSW2N15 Datasheet

 

HSW2N15 Datasheet and Replacement


   Type Designator: HSW2N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
   Package: SOT23-6L
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HSW2N15 Datasheet (PDF)

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HSW2N15

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DSThe HSW2N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 1.4 A DThe HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved.

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History: VBNC1303 | IRFS4010PBF

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