All MOSFET. HSW3415 Datasheet

 

HSW3415 Datasheet and Replacement


   Type Designator: HSW3415
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 113 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT23-6L
 

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HSW3415 Datasheet (PDF)

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HSW3415

HSW3415 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSW3415 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 29 m converter applications. ID -5 A The HSW3415 meet the RoHS and Green Product requirement with full function reliability approved. Super

Datasheet: HSU6115 , HSU6901 , HSU6903 , HSU70P06 , HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 , IRFP450 , HSW4602 , HSW6604 , HSW6800 , HSW6811 , HSW8205 , HSW8810 , MMN1000DB010B , MMN200H010X .

History: SSP4N90A | PSMN012-60YS | IXTP3N100P | BUK9Y27-40B | A03415 | IRF3415SPBF | KP740B

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