HSW3415 PDF and Equivalents Search

 

HSW3415 Specs and Replacement

Type Designator: HSW3415

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 113 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT23-6L

HSW3415 substitution

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HSW3415 datasheet

 ..1. Size:1071K  huashuo
 hsw3415.pdf pdf_icon

HSW3415

HSW3415 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSW3415 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 29 m converter applications. ID -5 A The HSW3415 meet the RoHS and Green Product requirement with full function reliability approved. Super ... See More ⇒

Detailed specifications: HSU6115, HSU6901, HSU6903, HSU70P06, HSU80N03, HSU90N02, HSU90N03, HSW2N15, NCEP15T14, HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810, MMN1000DB010B, MMN200H010X

Keywords - HSW3415 MOSFET specs

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