HSW4602 Specs and Replacement
Type Designator: HSW4602
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23-6
HSW4602 substitution
- MOSFET ⓘ Cross-Reference Search
HSW4602 datasheet
hsw4602.pdf
HSW4602 N-Ch and P-Ch Fast Switching MOSFETs Product Summary Description The HSW4602 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high 30V 30m 4.5A cell density, which provide excellent RDSON and -30V 70m -3.5A gate charge for most of the synchronous buck converter applications. The HSW4602 meet the RoHS and Green Product requir... See More ⇒
Detailed specifications: HSU6901, HSU6903, HSU70P06, HSU80N03, HSU90N02, HSU90N03, HSW2N15, HSW3415, AON7506, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810, MMN1000DB010B, MMN200H010X, FTB07N08N
Keywords - HSW4602 MOSFET specs
HSW4602 cross reference
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HSW4602 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SSP65R140SFD
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