All MOSFET. HSW4602 Datasheet

 

HSW4602 Datasheet and Replacement


   Type Designator: HSW4602
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT23-6
 

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HSW4602 Datasheet (PDF)

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HSW4602

HSW4602 N-Ch and P-Ch Fast Switching MOSFETs Product Summary Description The HSW4602 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with high 30V 30m 4.5A cell density, which provide excellent RDSON and -30V 70m -3.5A gate charge for most of the synchronous buck converter applications. The HSW4602 meet the RoHS and Green Product requir

Datasheet: HSU6901 , HSU6903 , HSU70P06 , HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , AON7506 , HSW6604 , HSW6800 , HSW6811 , HSW8205 , HSW8810 , MMN1000DB010B , MMN200H010X , FTB07N08N .

History: SI7868ADP

Keywords - HSW4602 MOSFET datasheet

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