HSW6604 Specs and Replacement
Type Designator: HSW6604
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.1 nS
Cossⓘ - Output Capacitance: 49 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23-6
HSW6604 substitution
- MOSFET ⓘ Cross-Reference Search
HSW6604 datasheet
hsw6604.pdf
HSW6604 N-Ch and P-Ch Fast Switching MOSFETs Product Summary Description The HSW6604 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 38m 4A high cell density, which provide excellent RDSON -20V 64m -3A and gate charge for most of the small power switching and load switch applications. The HSW6604 meet the RoHS and Green Product ... See More ⇒
Detailed specifications: HSU6903, HSU70P06, HSU80N03, HSU90N02, HSU90N03, HSW2N15, HSW3415, HSW4602, STP80NF70, HSW6800, HSW6811, HSW8205, HSW8810, MMN1000DB010B, MMN200H010X, FTB07N08N, FTP02N04NA
Keywords - HSW6604 MOSFET specs
HSW6604 cross reference
HSW6604 equivalent finder
HSW6604 pdf lookup
HSW6604 substitution
HSW6604 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10
Popular searches
2sd388 | 2sc1400 | 2sd331 | 2sc1312 datasheet | 2sb647 | k3561 transistor | c3203 transistor | irfp450 equivalent