All MOSFET. HSW6604 Datasheet

 

HSW6604 Datasheet and Replacement


   Type Designator: HSW6604
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.1 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOT23-6
 

 HSW6604 substitution

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HSW6604 Datasheet (PDF)

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HSW6604

HSW6604 N-Ch and P-Ch Fast Switching MOSFETs Product Summary Description The HSW6604 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 38m 4A high cell density, which provide excellent RDSON -20V 64m -3A and gate charge for most of the small power switching and load switch applications. The HSW6604 meet the RoHS and Green Product

Datasheet: HSU6903 , HSU70P06 , HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , 20N50 , HSW6800 , HSW6811 , HSW8205 , HSW8810 , MMN1000DB010B , MMN200H010X , FTB07N08N , FTP02N04NA .

History: 2SK1623 | MSD23N22 | IPB085N06LG | HM50P06 | SI1424EDH | PHK4NQ10T | 2SK2759-01R

Keywords - HSW6604 MOSFET datasheet

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