All MOSFET. HSW6604 Datasheet

 

HSW6604 Datasheet and Replacement


   Type Designator: HSW6604
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.1 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOT23-6
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HSW6604 Datasheet (PDF)

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HSW6604

HSW6604 N-Ch and P-Ch Fast Switching MOSFETs Product Summary Description The HSW6604 is the high performance BVDSS RDSON ID complementary N-ch and P-ch MOSFETs with 20V 38m 4A high cell density, which provide excellent RDSON -20V 64m -3A and gate charge for most of the small power switching and load switch applications. The HSW6604 meet the RoHS and Green Product

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMM11N80M3 | AM2314NE | FDMS9620S | IRFI7536G | RFP2N10L

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