All MOSFET. HSW6800 Datasheet

 

HSW6800 Datasheet and Replacement


   Type Designator: HSW6800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.9 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT23-6
 

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HSW6800 Datasheet (PDF)

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HSW6800

HSW6800 Dual N-CH Fast Switching MOSFETs Product Summary Description The HSW6800 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),max 45 m and load switch applications. ID 4 A The HSW6800 meet the RoHS and Green Product requirement with full function reliability approved

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HSW6800

HSW6811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSW6811 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 115 m and load switch applications. ID -2 A The HSW6811 meet the RoHS and Green Product requirement with full function reliability appro

Datasheet: HSU70P06 , HSU80N03 , HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , IRF1407 , HSW6811 , HSW8205 , HSW8810 , MMN1000DB010B , MMN200H010X , FTB07N08N , FTP02N04NA , RU20P7C-I .

History: IRF7509PBF-1 | STD35NF3LLT4 | IXTT140N10P | SSF2341E | SFF24N50 | BUZ32H | 2SK168

Keywords - HSW6800 MOSFET datasheet

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