HSW6800 PDF and Equivalents Search

 

HSW6800 Specs and Replacement

Type Designator: HSW6800

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.9 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23-6

HSW6800 substitution

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HSW6800 datasheet

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HSW6800

HSW6800 Dual N-CH Fast Switching MOSFETs Product Summary Description The HSW6800 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),max 45 m and load switch applications. ID 4 A The HSW6800 meet the RoHS and Green Product requirement with full function reliability approved... See More ⇒

 9.1. Size:398K  huashuo
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HSW6800

HSW6811 Dual P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSW6811 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 115 m and load switch applications. ID -2 A The HSW6811 meet the RoHS and Green Product requirement with full function reliability appro... See More ⇒

Detailed specifications: HSU70P06, HSU80N03, HSU90N02, HSU90N03, HSW2N15, HSW3415, HSW4602, HSW6604, IRFP450, HSW6811, HSW8205, HSW8810, MMN1000DB010B, MMN200H010X, FTB07N08N, FTP02N04NA, RU20P7C-I

Keywords - HSW6800 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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