HSW8205 Specs and Replacement
Type Designator: HSW8205
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 124 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23-6
HSW8205 substitution
- MOSFET ⓘ Cross-Reference Search
HSW8205 datasheet
hsw8205.pdf
HSW8205 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8205 is the low RDSON trenched N-CH MOSFETs. This product is suitable for Lithium-ion RDS(ON),max 28 m battery pack applications. The HSW8205 meet the RoHS and Green Product ID 4.6 A requirement with full function reliability approved. l Green Device Available l Super Low Gate C... See More ⇒
Detailed specifications: HSU90N02, HSU90N03, HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800, HSW6811, AO4407, HSW8810, MMN1000DB010B, MMN200H010X, FTB07N08N, FTP02N04NA, RU20P7C-I, HX2300, HX2300A
Keywords - HSW8205 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMB340N20HG2
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