All MOSFET. HSW8205 Datasheet

 

HSW8205 Datasheet and Replacement


   Type Designator: HSW8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOT23-6
 

 HSW8205 substitution

   - MOSFET ⓘ Cross-Reference Search

 

HSW8205 Datasheet (PDF)

 ..1. Size:1798K  huashuo
 hsw8205.pdf pdf_icon

HSW8205

HSW8205 Dual N-ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSW8205 is the low RDSON trenched N-CH MOSFETs. This product is suitable for Lithium-ion RDS(ON),max 28 m battery pack applications. The HSW8205 meet the RoHS and Green Product ID 4.6 A requirement with full function reliability approved. l Green Device Available l Super Low Gate C

Datasheet: HSU90N02 , HSU90N03 , HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 , HSW6811 , P60NF06 , HSW8810 , MMN1000DB010B , MMN200H010X , FTB07N08N , FTP02N04NA , RU20P7C-I , HX2300 , HX2300A .

History: HM80N15 | APTC60DAM18CTG | DMP6110SSD | KI2300 | EM6K7 | ELM56801EA | HUFA75829D3S

Keywords - HSW8205 MOSFET datasheet

 HSW8205 cross reference
 HSW8205 equivalent finder
 HSW8205 lookup
 HSW8205 substitution
 HSW8205 replacement

 

 
Back to Top

 


 
.