All MOSFET. MMN1000DB010B Datasheet

 

MMN1000DB010B Datasheet and Replacement


   Type Designator: MMN1000DB010B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1360 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1250 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 6100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm
   Package: MODULE
 

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MMN1000DB010B Datasheet (PDF)

 ..1. Size:771K  macmic
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MMN1000DB010B

MMN1000DB010B100V 1000A N-ch Power MOSFET Module March 2016 Preliminary RoHS CompliantPRODUCT FEATURES RDS(ON).typ=0.57m @VGS=10V 175 operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 10K Gate Protected Resistance InsideAPPLICATIONS High efficiency DC/DC Converters Synchronous RectifierVDS IDVDS IDType RDS(ON) max TJ=25 T

Datasheet: HSW2N15 , HSW3415 , HSW4602 , HSW6604 , HSW6800 , HSW6811 , HSW8205 , HSW8810 , 10N65 , MMN200H010X , FTB07N08N , FTP02N04NA , RU20P7C-I , HX2300 , HX2300A , SVF2N70MN , SVF3878PN .

History: SFF450Z | HGN027N06S | SIHFB9N65A | SUM110N08-07P | AFN3406A | IXFH5N100P | AP75N07GP

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