MMN1000DB010B Specs and Replacement
Type Designator: MMN1000DB010B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1360 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1250 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 6100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00075 Ohm
Package: MODULE
MMN1000DB010B substitution
- MOSFET ⓘ Cross-Reference Search
MMN1000DB010B datasheet
mmn1000db010b.pdf
MMN1000DB010B 100V 1000A N-ch Power MOSFET Module March 2016 Preliminary RoHS Compliant PRODUCT FEATURES RDS(ON).typ=0.57m @VGS=10V 175 operating temperature Low Gate Charge Minimize Switching Loss Fast Recovery body Diode 10K Gate Protected Resistance Inside APPLICATIONS High efficiency DC/DC Converters Synchronous Rectifier VDS ID VDS ID Type RDS(ON) max TJ=25 T... See More ⇒
Detailed specifications: HSW2N15, HSW3415, HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810, 4N60, MMN200H010X, FTB07N08N, FTP02N04NA, RU20P7C-I, HX2300, HX2300A, SVF2N70MN, SVF3878PN
Keywords - MMN1000DB010B MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HUFA75321D3S | WMB35P06TS
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