MMN200H010X Specs and Replacement
Type Designator: MMN200H010X
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 275 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 2500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: MODULE
MMN200H010X substitution
- MOSFET ⓘ Cross-Reference Search
MMN200H010X datasheet
mmn200h010x.pdf
MMN200H010X 100V 200A MOSFET Module April 2012 PRELIMINARY RoHS Compliant FEATURES N-channel,very low on-resistance R DS(on) 175 operating temperature Solderable pins for PCB mounting Temperature sense included APPLICATIONS AC motor control Motion/servo control Inverter and power supplies INVERTER SECTOR ABSOLUTE MAXIMUM RA... See More ⇒
Detailed specifications: HSW3415, HSW4602, HSW6604, HSW6800, HSW6811, HSW8205, HSW8810, MMN1000DB010B, IRFP250, FTB07N08N, FTP02N04NA, RU20P7C-I, HX2300, HX2300A, SVF2N70MN, SVF3878PN, SVF3N80M
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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