All MOSFET. MMN200H010X Datasheet

 

MMN200H010X Datasheet and Replacement


   Type Designator: MMN200H010X
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 275 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 2500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: MODULE
 

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MMN200H010X Datasheet (PDF)

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MMN200H010X

MMN200H010X 100V 200A MOSFET Module April 2012 PRELIMINARY RoHS Compliant FEATURES N-channel,very low on-resistance R DS(on) 175operating temperature Solderable pins for PCB mounting Temperature sense included APPLICATIONS AC motor control Motion/servo control Inverter and power supplies INVERTER SECTOR ABSOLUTE MAXIMUM RA

Datasheet: HSW3415 , HSW4602 , HSW6604 , HSW6800 , HSW6811 , HSW8205 , HSW8810 , MMN1000DB010B , STF13NM60N , FTB07N08N , FTP02N04NA , RU20P7C-I , HX2300 , HX2300A , SVF2N70MN , SVF3878PN , SVF3N80M .

History: AP4N2R6AMT

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