SVF4N60RD Specs and Replacement
Type Designator: SVF4N60RD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26.36 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO252
SVF4N60RD substitution
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SVF4N60RD datasheet
svf4n60rd svf4n60rdm.pdf
SVF4N60RD(M) 4A 600V N SVF4N60RD(M) N MOS F-CellTM VDMOS AC-DC ... See More ⇒
svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf
SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc... See More ⇒
Detailed specifications: SVF3N80T, SVF3N80F, SVF3N80D, SVF4N60D, SVF4N60T, SVF4N60M, SVF4N60F, SVF4N60RDM, AO3400A, SVF4N65CAF, SVF4N65CAD, SVF4N65CAM, SVF4N65CAMJ, SVF4N65CAMN, SVF4N65CAK, SVF4N65D, SVF4N65RD
Keywords - SVF4N60RD MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STH180N10F3-2 | WMB35P06TS
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