All MOSFET. SVF4N60RD Datasheet

 

SVF4N60RD Datasheet and Replacement


   Type Designator: SVF4N60RD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26.36 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO252
 

 SVF4N60RD substitution

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SVF4N60RD Datasheet (PDF)

 ..1. Size:325K  silan
 svf4n60rd svf4n60rdm.pdf pdf_icon

SVF4N60RD

SVF4N60RD(M) 4A600V N SVF4N60RD(M) N MOS F-CellTM VDMOS AC-DC

 7.1. Size:801K  1
 svf4n60caf svf4n60cak svf4n60cad svf4n60cat svf4n60camn svf4n60camj.pdf pdf_icon

SVF4N60RD

SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switc

 7.2. Size:800K  silan
 svf4n60d svf4n60f svf4n60t svf4n60m.pdf pdf_icon

SVF4N60RD

SVF4N60D/F/T/M 4A600V N SVF4N60D/F/T/M N MOS F-CellTM VDMOS

 7.3. Size:479K  silan
 svf4n60f svf4n60t svf4n60dtr svf4n60m.pdf pdf_icon

SVF4N60RD

SVF4N60D/F/T/M 4A600V N 2SVF4N60D/F/T/M N MOS F-CellTM VDMOS 113TO-252-2L3

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Datasheet: SVF3N80T , SVF3N80F , SVF3N80D , SVF4N60D , SVF4N60T , SVF4N60M , SVF4N60F , SVF4N60RDM , RU6888R , SVF4N65CAF , SVF4N65CAD , SVF4N65CAM , SVF4N65CAMJ , SVF4N65CAMN , SVF4N65CAK , SVF4N65D , SVF4N65RD .

History: APM9966C

Keywords - SVF4N60RD MOSFET datasheet

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