SVF4N65RD Specs and Replacement
Type Designator: SVF4N65RD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO252
SVF4N65RD substitution
- MOSFET ⓘ Cross-Reference Search
SVF4N65RD datasheet
svf4n65rd svf4n65rm svf4n65rmj svf4n65rf svf4n65rt.pdf
SVF4N65RD/M/MJ/F/T 4A 650V N 2 SVF4N65RD/M/MJ/F/T N MOS F-CellTM VDMOS 1 1 3 TO-252-2L 3 ... See More ⇒
Detailed specifications: SVF4N60RD, SVF4N65CAF, SVF4N65CAD, SVF4N65CAM, SVF4N65CAMJ, SVF4N65CAMN, SVF4N65CAK, SVF4N65D, IRLB3034, SVF4N65RM, SVF4N65RMJ, SVF4N65RF, SVF4N65RT, SVF5N60K, SVF5N65D, SVF5N65F, SVF6N60MJ
Keywords - SVF4N65RD MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: HSU6903
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