All MOSFET. SVF5N60K Datasheet

 

SVF5N60K Datasheet and Replacement


   Type Designator: SVF5N60K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30.6 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.15 Ohm
   Package: TO262
 

 SVF5N60K substitution

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SVF5N60K Datasheet (PDF)

 ..1. Size:563K  silan
 svf5n60f svf5n60d svf5n60k.pdf pdf_icon

SVF5N60K

SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS F-CellTM VDMOS 1133TO-252-2L 1.

 ..2. Size:458K  silan
 svf5n60f svf5n60dtr svf5n60k.pdf pdf_icon

SVF5N60K

SVF5N60F/D/K 5A600V N 2SVF5N60F/D/K N MOS 1 1 F-CellTM VDMOS 3TO-252-2L3 1.

 7.1. Size:528K  1
 svf5n60t svf5n60f svf5n60d svf5n60mj.pdf pdf_icon

SVF5N60K

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior

 7.2. Size:479K  silan
 svf5n60t svf5n60f svf5n60d svf5n60mj.pdf pdf_icon

SVF5N60K

SVF5N60T/F/D/MJ 5A600V N 2SVF5N60T/F/D/MJ NMOSF-CellTMVDMOS 1 TO-252-2L3

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Datasheet: SVF4N65CAMN , SVF4N65CAK , SVF4N65D , SVF4N65RD , SVF4N65RM , SVF4N65RMJ , SVF4N65RF , SVF4N65RT , 2SK3918 , SVF5N65D , SVF5N65F , SVF6N60MJ , SVF6N60F , SVF6N60D , SVF6N70F , SVF740MJ , SVF7N60CF .

History: AOT210L | TSM3900DCX6 | UT20N03L-TN3-R | STF42N65M5 | SI7411DN | SWP065R68E7T | DMT10H009LCG

Keywords - SVF5N60K MOSFET datasheet

 SVF5N60K cross reference
 SVF5N60K equivalent finder
 SVF5N60K lookup
 SVF5N60K substitution
 SVF5N60K replacement

 

 
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