SVF740MJ Specs and Replacement

Type Designator: SVF740MJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 98 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38.6 nS

Cossⓘ - Output Capacitance: 118.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO251J

SVF740MJ substitution

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SVF740MJ datasheet

 ..1. Size:468K  silan
 svf740t svf740mj.pdf pdf_icon

SVF740MJ

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 8.1. Size:227K  1
 svf740t svf740f.pdf pdf_icon

SVF740MJ

SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching... See More ⇒

 8.2. Size:343K  silan
 svf740ct.pdf pdf_icon

SVF740MJ

SVF740CT 10A 400V N 2 SVF740CT N MOS F-cellTM VDMOS 1 3 ... See More ⇒

Detailed specifications: SVF4N65RT, SVF5N60K, SVF5N65D, SVF5N65F, SVF6N60MJ, SVF6N60F, SVF6N60D, SVF6N70F, AO4468, SVF7N60CF, SVF7N60CS, SVF7N60CK, SVF7N60CMJ, SVF7N60CD, SVF7N60CT, SVF7N60F, SVF7N60S

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