SVF740MJ Datasheet and Replacement
Type Designator: SVF740MJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 98 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38.6 nS
Cossⓘ - Output Capacitance: 118.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO251J
SVF740MJ substitution
SVF740MJ Datasheet (PDF)
svf740t svf740mj.pdf
SVF740T/MJ 10A400V N 2SVF740T/MJ N MOS 1213 F-CellTM VDMOS 3TO-251J-3L 1. 2. 3.
svf740t svf740f.pdf
SVF740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: SVF4N65RT , SVF5N60K , SVF5N65D , SVF5N65F , SVF6N60MJ , SVF6N60F , SVF6N60D , SVF6N70F , IRF730 , SVF7N60CF , SVF7N60CS , SVF7N60CK , SVF7N60CMJ , SVF7N60CD , SVF7N60CT , SVF7N60F , SVF7N60S .
History: VS3614AD | SRT10N120LTC
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History: VS3614AD | SRT10N120LTC
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