SVF7N65CMJ Datasheet and Replacement
Type Designator: SVF7N65CMJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 98 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251J
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SVF7N65CMJ Datasheet (PDF)
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SVF7N65CF/D/MJ/K/S/FQ 7A650V N SVF7N65CF/D/MJ/K/S/FQ N MOS F-CellTM VDMOS
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SVF7N65CF/D/MJ/K/T 7A650V N 2SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 123 TO-262-3L3
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SVF7N65CF/D/MJ/MJL/K/T 7A650V N 2 1SVF7N65CF/D/MJ/MJL/K/T N MOS 231 F-CellTM VDMOS TO-262-3L3 12
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BUK444-800A | IRFB16N60LPBF | NVMFD024N06CT1G | HGK019NE6A | 2SK3089 | 2SK2229 | ASDM30P11TD-R
Keywords - SVF7N65CMJ MOSFET datasheet
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History: BUK444-800A | IRFB16N60LPBF | NVMFD024N06CT1G | HGK019NE6A | 2SK3089 | 2SK2229 | ASDM30P11TD-R



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