SVF7N65CMJ Specs and Replacement
Type Designator: SVF7N65CMJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 98 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251J
SVF7N65CMJ substitution
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SVF7N65CMJ datasheet
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SVF7N65CF/D/MJ/K/T 7A 650V N 2 SVF7N65CF/D/MJ/K/T N MOS 1 F-CellTM VDMOS 1 2 3 TO-262-3L 3 ... See More ⇒
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Detailed specifications: SVF7N60CMJ, SVF7N60CD, SVF7N60CT, SVF7N60F, SVF7N60S, SVF7N60D, SVF7N65CF, SVF7N65CD, IRF640, SVF7N65CK, SVF7N65CS, SVF7N65CFQ, SVF7N65CT, SVF7N65S, SVF7N80T, SVF7N80F, SVF840F
Keywords - SVF7N65CMJ MOSFET specs
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