SVF8N65T Datasheet and Replacement
Type Designator: SVF8N65T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51.47 nS
Cossⓘ - Output Capacitance: 99 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220
SVF8N65T substitution
SVF8N65T Datasheet (PDF)
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SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1
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SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: SVF7N80T , SVF7N80F , SVF840F , SVF840D , SVF840S , SVF840MJ , SVF8N60T , SVF8N60F , 2SK3878 , SVF8N65F , SVS11N65FJD2 , SVS20N60FJD2 , SVS20N60KD2 , SVS20N60TD2 , SVS20N60PND2 , SVS20N60SD2 , SVS20N60SD2TR .
History: 2SK1275 | 2SK2897-01 | 2SK3434 | 2SK2806-01 | APM7318KC | PJE8406 | BLL6H1214LS-250
Keywords - SVF8N65T MOSFET datasheet
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History: 2SK1275 | 2SK2897-01 | 2SK3434 | 2SK2806-01 | APM7318KC | PJE8406 | BLL6H1214LS-250
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