SVF8N65F Datasheet and Replacement
Type Designator: SVF8N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51.47 nS
Cossⓘ - Output Capacitance: 99 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
SVF8N65F substitution
SVF8N65F Datasheet (PDF)
svf8n65rmj svf8n65rdtr.pdf
SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1
svf8n60t svf8n60f.pdf
SVF8N60T/F_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietaryF-CellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching
Datasheet: SVF7N80F , SVF840F , SVF840D , SVF840S , SVF840MJ , SVF8N60T , SVF8N60F , SVF8N65T , STP75NF75 , SVS11N65FJD2 , SVS20N60FJD2 , SVS20N60KD2 , SVS20N60TD2 , SVS20N60PND2 , SVS20N60SD2 , SVS20N60SD2TR , SVS20N60P7D2 .
History: HM3414B | AP20N15AGI-HF | IXFR80N15Q | SM9992DSQG | IXFP80N25X3 | AP95T06GP | BLM2010E
Keywords - SVF8N65F MOSFET datasheet
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History: HM3414B | AP20N15AGI-HF | IXFR80N15Q | SM9992DSQG | IXFP80N25X3 | AP95T06GP | BLM2010E
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