IXFQ90N20X3 MOSFET Datasheet: N-Ch, 200V, 90A. Full specification with pinout and replacement list

IXFQ90N20X3 Specs and Replacement

Type Designator: IXFQ90N20X3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 390 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0128 Ohm

Package: TO3P

IXFQ90N20X3 substitution

- MOSFET ⓘ Cross-Reference Search

IXFQ90N20X3 datasheet

..1. Size:191K ixys
ixfp90n20x3 ixfq90n20x3 ixfh90n20x3.pdf pdf_icon

X3-Class HiPerFETTM VDSS = 200V IXFP90N20X3 Power MOSFET ID25 = 90A IXFQ90N20X3 RDS(on) 12.8m IXFH90N20X3 N-Channel Enhancement Mode Avalanche Rated TO-220AB (IXFP) G D D (Tab) S TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V G VDGR TJ = 25 C to 150 C, RGS = 1M 200 V D S VGSS Continuous ... See More ⇒

9.1. Size:145K ixys
ixfh94n30p3 ixfq94n30p3 ixft94n30p3.pdf pdf_icon

Advance Technical Information Polar3TM HiperFETTM VDSS = 300V IXFT94N30P3 ID25 = 94A Power MOSFETs IXFQ94N30P3 RDS(on) 36m IXFH94N30P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C... See More ⇒

Detailed specifications: IXFK50N85X, IXFK80N65X2, IXFP34N65X2M, IXFP60N25X3, IXFP80N25X3, IXFP90N20X3, IXFQ60N25X3, IXFQ80N25X3, STP80NF70, IXFT40N85XHV, IXFT50N85XHV, IXFH80N25X3, IXTH240N15X4, IXTP34N65X2, IXTT240N15X4HV, AIMW120R045M1, AUIRLS8409-7P