BSC010N04LS6 PDF and Equivalents Search

 

BSC010N04LS6 Specs and Replacement

Type Designator: BSC010N04LS6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm

Package: SUPERSO8

BSC010N04LS6 substitution

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BSC010N04LS6 datasheet

 ..1. Size:1476K  infineon
 bsc010n04ls6.pdf pdf_icon

BSC010N04LS6

BSC010N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2 ... See More ⇒

 3.1. Size:573K  infineon
 bsc010n04ls.pdf pdf_icon

BSC010N04LS6

BSC010N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for sychronous rectification RDS(on),max 1.0 mW Very low on-resistance R DS(on) ID 100 A 100% avalanche tested Qoss 84 nC Superior thermal resistance Qg(0V..10V) 95 nC N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg... See More ⇒

 3.2. Size:1279K  infineon
 bsc010n04lst.pdf pdf_icon

BSC010N04LS6

BSC010N04LST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 40 V 8 7 6 Features 5 Optimized for sychronous rectification 175 C rated 1 5 2 6 Very low on-resistance R DS(on) 7 3 4 8 100% avalanche tested Superior thermal resistance 4 N-channel, logic level 3 Qualified according to JEDEC1) for target applications 2 ... See More ⇒

 3.3. Size:598K  infineon
 bsc010n04lsi.pdf pdf_icon

BSC010N04LS6

BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for synchronous rectification RDS(on),max 1.05 mW Integrated monolithic Schottky-like diode A ID 100 Very low on-resistance R DS(on) QOSS 83 nC 100% avalanche tested 87 nC QG(0V..10V) N-channel, channel Qualified according to JEDEC1) for target applications PG-TDSO... See More ⇒

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Detailed specifications: IXTP34N65X2, IXTT240N15X4HV, AIMW120R045M1, AUIRLS8409-7P, BF2040, BF2040R, BF2040W, BSC007N04LS6, AO3407, BSC010N04LST, BSC011N03LST, BSC014N06NSSC, BSC015NE2LS5I, BSC016N06NST, BSC021N08NS5, BSC022N04LS6, BSC027N06LS5

Keywords - BSC010N04LS6 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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