All MOSFET. BSC034N10LS5 Datasheet

 

BSC034N10LS5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC034N10LS5
   Marking Code: 034N10LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 61 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: SUPERSO8

 BSC034N10LS5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC034N10LS5 Datasheet (PDF)

 ..1. Size:1071K  infineon
 bsc034n10ls5.pdf

BSC034N10LS5 BSC034N10LS5

BSC034N10LS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified acco

 7.1. Size:631K  infineon
 bsc034n03ls.pdf

BSC034N10LS5 BSC034N10LS5

BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup

 7.2. Size:489K  infineon
 bsc034n06ns.pdf

BSC034N10LS5 BSC034N10LS5

TypeBSC034N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 3.4 mW Superior thermal resistanceID 100 A N-channelQOSS nC 37 Qualified according to JEDEC1) for target applicationsQG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal

 7.3. Size:670K  infineon
 bsc034n03lsg.pdf

BSC034N10LS5 BSC034N10LS5

BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup

 7.4. Size:686K  infineon
 bsc034n03ls .pdf

BSC034N10LS5 BSC034N10LS5

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