BSC070N10LS5 Datasheet and Replacement
Type Designator: BSC070N10LS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: SUPERSO8
BSC070N10LS5 substitution
BSC070N10LS5 Datasheet (PDF)
bsc070n10ls5.pdf

BSC070N10LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified accor
bsc070n10ns5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal
bsc070n10ns3g.pdf

BSC070N10NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 100 V Very low gate charge for high frequency applicationsRDS(on),max 7mW Optimized for dc-dc conversionID 90 A N-channel, normal levelPG-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature Pb-free lead plating;
Datasheet: BSC0501NSI , BSC0502NSI , BSC0503NSI , BSC0504NSI , BSC050N10NS5 , BSC059N04LS6 , BSC065N06LS5 , BSC0702LS , AON7403 , BSC070N10NS5SC , BSC072N04LD , BSC074N15NS5 , BSC076N04ND , BSC0804LS , BSC0805LS , BSC093N15NS5 , BSC094N06LS5 .
History: H5N3005LM
Keywords - BSC070N10LS5 MOSFET datasheet
BSC070N10LS5 cross reference
BSC070N10LS5 equivalent finder
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History: H5N3005LM



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