BSC13DN30NSFD Specs and Replacement
Type Designator: BSC13DN30NSFD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SUPERSO8
BSC13DN30NSFD substitution
- MOSFET ⓘ Cross-Reference Search
BSC13DN30NSFD datasheet
bsc13dn30nsfd.pdf
BSC13DN30NSFD MOSFET SuperSO8 OptiMOSTM3 Power-Transistor, 300 V 5 8 6 7 Features 7 6 8 5 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Qualified according to JEDEC1) for target application 3 1 4 Halogen-free according to IEC... See More ⇒
bsc130p03lsg .pdf
BSC130P03LS G OptiMOS -P Power-Transistor Product Summary Features VDS -30 V P-Channel RDS(on),max 13 mW Enhancement mode ID -22.5 A Logic level 150 C operating temperature Avalanche rated; RoHS compliant PG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant ... See More ⇒
Detailed specifications: BSC093N15NS5, BSC094N06LS5, BSC096N10LS5, BSC097N06NST, BSC0993ND, BSC0996NS, BSC110N15NS5, BSC112N06LD, IRF740, BSC146N10LS5, BSC155N06ND, BSC160N15NS5, BSC350N20NSFD, BSF450NE7NH3G, BSS340NW, BSZ009NE2LS5, BSZ010NE2LS5
Keywords - BSC13DN30NSFD MOSFET specs
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History: RU20P3C | BRFL60R190C | HCI70R360 | RU2060L | STW75NF30 | 2SK1272 | 2SK1288
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