All MOSFET. BSC13DN30NSFD Datasheet

 

BSC13DN30NSFD Datasheet and Replacement


   Type Designator: BSC13DN30NSFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SUPERSO8
 

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BSC13DN30NSFD Datasheet (PDF)

 ..1. Size:921K  infineon
 bsc13dn30nsfd.pdf pdf_icon

BSC13DN30NSFD

BSC13DN30NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 300 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC

 9.1. Size:595K  infineon
 bsc130p03lsg .pdf pdf_icon

BSC13DN30NSFD

BSC130P03LS GOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V P-ChannelRDS(on),max 13mW Enhancement modeID -22.5 A Logic level 150C operating temperature Avalanche rated; RoHS compliantPG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant

Datasheet: BSC093N15NS5 , BSC094N06LS5 , BSC096N10LS5 , BSC097N06NST , BSC0993ND , BSC0996NS , BSC110N15NS5 , BSC112N06LD , IRF740 , BSC146N10LS5 , BSC155N06ND , BSC160N15NS5 , BSC350N20NSFD , BSF450NE7NH3G , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 .

Keywords - BSC13DN30NSFD MOSFET datasheet

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