BSC146N10LS5 MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC146N10LS5
Marking Code: 146N10LS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0146 Ohm
Package: SUPERSO8
BSC146N10LS5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC146N10LS5 Datasheet (PDF)
bsc146n10ls5.pdf
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BSC146N10LS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified acco
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