BSC146N10LS5 Datasheet and Replacement
Type Designator: BSC146N10LS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0146 Ohm
Package: SUPERSO8
BSC146N10LS5 substitution
BSC146N10LS5 Datasheet (PDF)
bsc146n10ls5.pdf

BSC146N10LS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified acco
Datasheet: BSC094N06LS5 , BSC096N10LS5 , BSC097N06NST , BSC0993ND , BSC0996NS , BSC110N15NS5 , BSC112N06LD , BSC13DN30NSFD , 20N60 , BSC155N06ND , BSC160N15NS5 , BSC350N20NSFD , BSF450NE7NH3G , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I .
History: NCE0103M | WMJ9N90D1B | KRF7703 | KRF7604 | WMN80R480S
Keywords - BSC146N10LS5 MOSFET datasheet
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History: NCE0103M | WMJ9N90D1B | KRF7703 | KRF7604 | WMN80R480S



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