All MOSFET. BSC146N10LS5 Datasheet

 

BSC146N10LS5 Datasheet and Replacement


   Type Designator: BSC146N10LS5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0146 Ohm
   Package: SUPERSO8
 

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BSC146N10LS5 Datasheet (PDF)

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BSC146N10LS5

BSC146N10LS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified acco

Datasheet: BSC094N06LS5 , BSC096N10LS5 , BSC097N06NST , BSC0993ND , BSC0996NS , BSC110N15NS5 , BSC112N06LD , BSC13DN30NSFD , IRF840 , BSC155N06ND , BSC160N15NS5 , BSC350N20NSFD , BSF450NE7NH3G , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I .

History: SM6008NF | HAT2174N | DH045N06E | 2SK1813

Keywords - BSC146N10LS5 MOSFET datasheet

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