BSC350N20NSFD Datasheet and Replacement
Type Designator: BSC350N20NSFD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 137 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SUPERSO8
BSC350N20NSFD substitution
BSC350N20NSFD Datasheet (PDF)
bsc350n20nsfd.pdf
BSC350N20NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 200 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC
Datasheet: BSC0993ND , BSC0996NS , BSC110N15NS5 , BSC112N06LD , BSC13DN30NSFD , BSC146N10LS5 , BSC155N06ND , BSC160N15NS5 , IRF540 , BSF450NE7NH3G , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 .
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