BSC350N20NSFD MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC350N20NSFD
Marking Code: 350N20NF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 22 nC
trⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 137 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SUPERSO8
BSC350N20NSFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC350N20NSFD Datasheet (PDF)
bsc350n20nsfd.pdf
BSC350N20NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 200 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: STP4N100
History: STP4N100
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918