All MOSFET. BSC350N20NSFD Datasheet

 

BSC350N20NSFD MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC350N20NSFD
   Marking Code: 350N20NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SUPERSO8

 BSC350N20NSFD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC350N20NSFD Datasheet (PDF)

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bsc350n20nsfd.pdf

BSC350N20NSFD
BSC350N20NSFD

BSC350N20NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 200 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: STP4N100

 

 
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