All MOSFET. BSC350N20NSFD Datasheet

 

BSC350N20NSFD Datasheet and Replacement


   Type Designator: BSC350N20NSFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SUPERSO8
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BSC350N20NSFD Datasheet (PDF)

 ..1. Size:931K  infineon
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BSC350N20NSFD

BSC350N20NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 200 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MT6JN009A | STD50N03L-1 | STD4NK60Z | KNB2710A | HUFA76419DF085 | 2SK2047 | IRLB4030

Keywords - BSC350N20NSFD MOSFET datasheet

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