All MOSFET. BSC350N20NSFD Datasheet

 

BSC350N20NSFD Datasheet and Replacement


   Type Designator: BSC350N20NSFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 137 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SUPERSO8
 

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BSC350N20NSFD Datasheet (PDF)

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BSC350N20NSFD

BSC350N20NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 200 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC

Datasheet: BSC0993ND , BSC0996NS , BSC110N15NS5 , BSC112N06LD , BSC13DN30NSFD , BSC146N10LS5 , BSC155N06ND , BSC160N15NS5 , IRF540N , BSF450NE7NH3G , BSS340NW , BSZ009NE2LS5 , BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 .

History: STL100N6LF6 | PMXB40UNE

Keywords - BSC350N20NSFD MOSFET datasheet

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