All MOSFET. BSZ009NE2LS5 Datasheet

 

BSZ009NE2LS5 Datasheet and Replacement


   Type Designator: BSZ009NE2LS5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 39 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
   Package: TSDSON-8
 

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BSZ009NE2LS5 Datasheet (PDF)

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BSZ009NE2LS5

BSZ009NE2LS5MOSFETTSDSON-8 FLOptiMOSTM 5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for e-fuse and ORing application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualifi

Datasheet: BSC112N06LD , BSC13DN30NSFD , BSC146N10LS5 , BSC155N06ND , BSC160N15NS5 , BSC350N20NSFD , BSF450NE7NH3G , BSS340NW , IRFZ44 , BSZ010NE2LS5 , BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 , BSZ021N04LS6 , BSZ024N04LS6 , BSZ031NE2LS5 .

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