BSZ009NE2LS5 Datasheet and Replacement
Type Designator: BSZ009NE2LS5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id|ⓘ - Maximum Drain Current: 39 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
Package: TSDSON-8
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BSZ009NE2LS5 Datasheet (PDF)
bsz009ne2ls5.pdf

BSZ009NE2LS5MOSFETTSDSON-8 FLOptiMOSTM 5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for e-fuse and ORing application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualifi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IRFR2405 | MMBF5457 | 2N3797 | SL3139K | IPD90N06S4-05 | ME45N03T | NP80N03DDE
Keywords - BSZ009NE2LS5 MOSFET datasheet
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History: IRFR2405 | MMBF5457 | 2N3797 | SL3139K | IPD90N06S4-05 | ME45N03T | NP80N03DDE



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