BSZ009NE2LS5 Specs and Replacement
Type Designator: BSZ009NE2LS5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 1200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
Package: TSDSON-8
BSZ009NE2LS5 substitution
- MOSFET ⓘ Cross-Reference Search
BSZ009NE2LS5 datasheet
bsz009ne2ls5.pdf
BSZ009NE2LS5 MOSFET TSDSON-8 FL OptiMOSTM 5 Power-Transistor, 25 V (enlarged source interconnection) Features Optimized for e-fuse and ORing application Very low on-resistance R DS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Fully qualifi... See More ⇒
Detailed specifications: BSC112N06LD, BSC13DN30NSFD, BSC146N10LS5, BSC155N06ND, BSC160N15NS5, BSC350N20NSFD, BSF450NE7NH3G, BSS340NW, IRFZ44, BSZ010NE2LS5, BSZ011NE2LS5I, BSZ013NE2LS5I, BSZ017NE2LS5I, BSZ018N04LS6, BSZ021N04LS6, BSZ024N04LS6, BSZ031NE2LS5
Keywords - BSZ009NE2LS5 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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