All MOSFET. BSZ009NE2LS5 Datasheet

 

BSZ009NE2LS5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSZ009NE2LS5
   Marking Code: 09NE2L5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 39 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0009 Ohm
   Package: TSDSON-8

 BSZ009NE2LS5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSZ009NE2LS5 Datasheet (PDF)

 ..1. Size:1211K  infineon
 bsz009ne2ls5.pdf

BSZ009NE2LS5 BSZ009NE2LS5

BSZ009NE2LS5MOSFETTSDSON-8 FLOptiMOSTM 5 Power-Transistor, 25 V(enlarged source interconnection)Features Optimized for e-fuse and ORing application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualifi

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: JCS12N65CT | SM8A01NSF | IXTN40P50P | AO7404 | STK12N05L

 

 
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