BSZ037N06LS5
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ037N06LS5
Marking Code: 037N06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 500
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037
Ohm
Package:
TSDSON-8
BSZ037N06LS5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ037N06LS5
Datasheet (PDF)
..1. Size:1210K infineon
bsz037n06ls5.pdf
BSZ037N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync rec. 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Indus
9.1. Size:595K infineon
bsz036ne2ls.pdf
For BSZ036NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 5.1 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TS
9.2. Size:1615K infineon
bsz033ne2ls5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS
9.3. Size:560K infineon
bsz035n03ms bsz035n03msg.pdf
BSZ035N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 4.3 100% avalanche testedID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FO
9.4. Size:1213K infineon
bsz039n06ns.pdf
BSZ039N06NSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. Rec 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enlarged source interc
9.5. Size:1616K infineon
bsz031ne2ls5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ031NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ031NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS
9.6. Size:717K infineon
bsz034n04ls.pdf
BSZ034N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 3.4 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 22 nC Superior thermal resistanceQG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-
9.7. Size:631K infineon
bsz035n03lsg.pdf
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9.8. Size:629K infineon
bsz035n03ls.pdf
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