All MOSFET. BSZ037N06LS5 Datasheet

 

BSZ037N06LS5 Datasheet and Replacement


   Type Designator: BSZ037N06LS5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TSDSON-8
 

 BSZ037N06LS5 substitution

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BSZ037N06LS5 Datasheet (PDF)

 ..1. Size:1210K  infineon
bsz037n06ls5.pdf pdf_icon

BSZ037N06LS5

BSZ037N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync rec. 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Indus

 9.1. Size:595K  infineon
bsz036ne2ls.pdf pdf_icon

BSZ037N06LS5

For BSZ036NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 5.1 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TS

 9.2. Size:1615K  infineon
bsz033ne2ls5.pdf pdf_icon

BSZ037N06LS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS

 9.3. Size:560K  infineon
bsz035n03ms bsz035n03msg.pdf pdf_icon

BSZ037N06LS5

BSZ035N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 4.3 100% avalanche testedID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FO

Datasheet: BSZ011NE2LS5I , BSZ013NE2LS5I , BSZ017NE2LS5I , BSZ018N04LS6 , BSZ021N04LS6 , BSZ024N04LS6 , BSZ031NE2LS5 , BSZ033NE2LS5 , IRFB4227 , BSZ039N06NS , BSZ040N06LS5 , BSZ0500NSI , BSZ0589NS , BSZ063N04LS6 , BSZ065N06LS5 , BSZ0703LS , BSZ070N08LS5 .

History: BSZ0907ND

Keywords - BSZ037N06LS5 MOSFET datasheet

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 BSZ037N06LS5 equivalent finder
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