Справочник MOSFET. BSZ037N06LS5

 

BSZ037N06LS5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSZ037N06LS5
   Маркировка: 037N06L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 35 nC
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
   Тип корпуса: TSDSON-8

 Аналог (замена) для BSZ037N06LS5

 

 

BSZ037N06LS5 Datasheet (PDF)

 ..1. Size:1210K  infineon
bsz037n06ls5.pdf

BSZ037N06LS5 BSZ037N06LS5

BSZ037N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync rec. 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Indus

 9.1. Size:595K  infineon
bsz036ne2ls.pdf

BSZ037N06LS5 BSZ037N06LS5

For BSZ036NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 5.1 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TS

 9.2. Size:1615K  infineon
bsz033ne2ls5.pdf

BSZ037N06LS5 BSZ037N06LS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS

 9.3. Size:560K  infineon
bsz035n03ms bsz035n03msg.pdf

BSZ037N06LS5 BSZ037N06LS5

BSZ035N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 4.3 100% avalanche testedID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FO

 9.4. Size:1213K  infineon
bsz039n06ns.pdf

BSZ037N06LS5 BSZ037N06LS5

BSZ039N06NSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. Rec 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enlarged source interc

 9.5. Size:1616K  infineon
bsz031ne2ls5.pdf

BSZ037N06LS5 BSZ037N06LS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ031NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ031NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS

 9.6. Size:717K  infineon
bsz034n04ls.pdf

BSZ037N06LS5 BSZ037N06LS5

BSZ034N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 3.4 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 22 nC Superior thermal resistanceQG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-

 9.7. Size:631K  infineon
bsz035n03lsg.pdf

BSZ037N06LS5 BSZ037N06LS5

%* ! % #=;0@/? %@9 9 -=D E #;B 1= "% &D Featuresm D n) m xQ 2CD CG:D49:?8 ') - . 7@B -'*- 4 DQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC1) G D ON Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 ,

 9.8. Size:629K  infineon
bsz035n03ls.pdf

BSZ037N06LS5 BSZ037N06LS5

%* ! % #=;0@/? %@9 9 -=D E #;B 1= "% &D Featuresm D n) m xQ 2CD CG:D49:?8 ') - . 7@B -'*- 4 DQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC1) G D ON Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 ,

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